一种新型的采用AlGaAs材料设计制成的光波导显示了其在中红外激光器方面的应用.波导部分包含在两个GaAs的包层之间,两个包层的掺杂材料限制光场在波导中传播并且降低损耗.三个不同长度的波导经过切入式测量得到它们的内部传播损耗为1.5dB/cm和耦合损耗为9 dB.所采用的中红外激光器的波长是5.1 μm,输出功率在45毫瓦以上.从光波导输出的光功率只有几个毫瓦.

A promising waveguide design for midinfrared semiconductor lasers is proposed and demonstrated in AlGaAs structures. The waveguide region is embedded between two GaAs layers, with an appropriate doping profile which allows optical confinement with low waveguide loss. Low internal gradient loss of 1.5dB/cm and connection loss of 9 dB have been measured using cut back techniques for waveguides with lengths of 1mm, 3mm and 5mm. The 5.1 μm free running laser itself has peak output power in excess of 45 mW and the output power from the waveguide is about a few mW.