激光与光电子学进展, 2005, 42 (2): 41, 网络出版: 2006-06-01
宽禁带氧化锌半导体薄膜的研究进展
Development of Wide-Gap Zinc Oxide Semiconductor Thin Films
摘要
氧化锌作为新一代化合物半导体,其禁带宽度对应紫外光的波长。氧化锌薄膜有望开发蓝光、蓝绿光、紫外光等多种发光器件,具有广阔的应用前景。重点介绍了氧化锌薄膜的研究进展以及存在的问题,并对氧化锌薄膜的未来进行了展望。
Abstract
As a new generation of compound semiconductor, zinc oxide has widegap. Zinc oxide thin film is a promising candidate for light emission devices for blue, blue-green, and UV regions. This paper presents the research progress, the existing problems and the prospects of zinc oxide functional thin films.
洪瑞金, 贺洪波, 邵建达, 范正修. 宽禁带氧化锌半导体薄膜的研究进展[J]. 激光与光电子学进展, 2005, 42(2): 41. 洪瑞金, 贺洪波, 邵建达, 范正修. Development of Wide-Gap Zinc Oxide Semiconductor Thin Films[J]. Laser & Optoelectronics Progress, 2005, 42(2): 41.
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