研究了旋光晶体在偏光干涉实验中的电光效应,给出了旋光晶体在偏光干涉实验中出射光强与晶体旋光性之间关系的表达式I =A20 cos2 β-(π/λ)(nl-nr)l,以及与旋光晶体电光效应之间关系的表达式I =A20 cos2 β-(π/λ)(nl-nr)l+(π/λ)(n2 -n1)l 。根据这些表达式给出的关系,将典型的旋光晶体La3Ga5 SiO14制作成了电光Q开关,像那些用无旋光性晶体制作的Q开关一样工作良好。在中等功率输出的激光器中,La3Ga5 SiO14晶体电光Q开关有可能取代氘化磷酸二氢钾(DKDP)晶体电光Q开关

The electrooptic effect of the optical active crystals is studied in the experimental set of polarized light interference. In the polarized light interferometric experiment, the express equation of the relation between the emitted light intensity and the optical activity(I=A~2_0cos~2β-(π/λ)(n_l-n_r)l) is given. The express equation of the relation between the emitted light intensity and the electrooptic effect of the optical active crystals is also given, that is(I=A~2_0cos~2β-(π/λ)(n_l-n_r)l+(π/λ)(n_2-n_1)l.) According to these relations expressed by the equations, the electrooptic Q switch is made by using La_3Ga_5SiO_(14) crystal which is a typically optical active crystal. The Q switch works normally as those switches which have not optical activity. It may be used in medium output energy lasers to partly take the place of DKAP Q-switches.