中国激光, 2003, 30 (7): 593, 网络出版: 2006-06-27
自由电子激光对GaAs/AlGaAs异质结构材料电学性质的影响
Investigation of Electricity Property of GaAs/AlGaAs Heterostructure Material Influenced by FEL
激光技术 电学性质 自由电子激光 异质结构材料 二维电子气 辐照效应 laser technique electricity property free-electron laser heterostructure material 2DEG irradiation effect
摘要
自由电子激光(FEL)辐照样品前和辐照样品时,使用变温霍尔测量系统测试了这种n型调制掺杂GaAs/AlGaAs异质结构材料中准二维电子气(2DEG)的迁移率、电子浓度和电阻率.对比这两种情况下的结果可以发现:1) 迁移率随温度升高而降低,光照使迁移率增大;2) 电子浓度随温度变化关系相对较为复杂,但是平均而言,光照会使电子浓度减小;3) 电阻率随温度升高而升高,光照使电阻率减小,但这种影响不明显.对这些现象给出了具体的分析.
Abstract
The Hall measurement equipment has been used to measure the mobility, the electron concentration and the resistivity of the 2DEG in the n-type modulation-doped GaAs/AlxGa1-xAs heterostruqture material before and during the sample being irradiated by FEL. Comparing the result of two cases, it is found that: 1) with enhancing temperature, the mobility decreases, and FEL makes the mobility increase; 2) the variety of the electron concentration with the temperature is more complex, but generally speaking, FEL makes electron concentration reduce; 3) with enhancing temperature, the resistivity increases, and FEL makes the resistivity decline, but the effect isn't obvious. These phenomena have all been analyzed in details.
张猛, 林理彬, 邹睿, 张国庆, 李永贵. 自由电子激光对GaAs/AlGaAs异质结构材料电学性质的影响[J]. 中国激光, 2003, 30(7): 593. 张猛, 林理彬, 邹睿, 张国庆, 李永贵. Investigation of Electricity Property of GaAs/AlGaAs Heterostructure Material Influenced by FEL[J]. Chinese Journal of Lasers, 2003, 30(7): 593.
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