采用窄条宽选区生长化学气相沉积(NSAG-MOCVD)技术在掩膜宽度0～40 μm范围内,获得波长漂移达177.5 nm的高质量的InGaAsP材料,经推导,获得各个生长区域的组份、应变和In,Ga的气相浓度增加因子的比值随掩膜条宽的变化关系,并且认为该比值在阈值掩膜宽度范围内,与Ⅲ族分压比相关,大于阈值掩膜宽度范围内,与Ⅲ族源无关.此外,对材料富In现象作了合理解释.

The High quality InGaAsP materials, which wavelength shift is more than 177.5 nm with a small mask width of 0-40 μm, have been obtained by use of NSAG-MOCVD in the low growth pressure of 130 mbar. The composition variation, strain and the enhancement ratios of the vapor phase concentrations for TMIn and TMGa on the epilayer surface at the center of the mask opening to that in the maskless region with the mask width have been deduced, respectively. It is discovered that the ratio variation with the mask width is dependent on the concenration of TMIn and TMGa in the vapour phase when the mask width is less than the threshold mask width, and independent on that when the mask width is more than the threshold mask width. Moreover, the phenomena of In rich with the mask width increase has been explained rationally.