利用脉冲激光沉积(PLD)技术在镀钛的陶瓷衬底上制备出了非晶态氮化硼薄膜,借助于X射线衍射(XRD)、扫描电子显微镜(SEM)及Raman光谱分析了该薄膜的结构,并研究了薄膜场致电子发射特性,阈值电场为4.6 V/μm,当电场为9 V/μm时,电流密度为50 μA/cm2.

Amorphous boron nitride thin film was prepared on the titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined by using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The electron field emission characteristics were investigated. The turn-on field was 4.6 V/μm. The current density was 50 μA/cm 2 at an electric field of 9 V/μm.