讨论了隧道再生大功率半导体激光器内部的热源分布,利用有限元方法模拟计算了其在脉冲工作下的二维瞬态热分布,同时测量了不同时刻波长的漂移量并换算为温升值,与计算结果进行了比较,二者基本吻合。模拟结果还表明靠近衬底的有源区温度略高于靠近热沉的有源区温度;用金刚石-铜热沉替换铜热沉,还可以很好地降低器件内部温升,使隧道再生大功率半导体激光器能够高效工作。

Heat source of tunnel regeneration high power semiconductor laser has been discussed. Two-dimension transient thermal distribution of this kind of laser diode at pulse work is simulated by using the finite element method, and the wavelength shift is measured and converted to temperature rising value at different time, the calculated results are in agreement with the measured data. It is found that the temperature rising of the active region close to the substrate is higher than that of the active region close to the heat sink, and using the diamond-copper heat sink to replace the copper heat sink could reduce the inner temperature rising of laser diode greatly, and make tunnel regeneration high-power semiconductor laser working with high efficiency.