中国激光, 2006, 33 (suppl): 240, 网络出版: 2006-04-21
980 nm垂直外腔面发射激光器理论分析
980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser
激光技术 半导体激光器 垂直外腔面发射激光器 光抽运 lasers technique semiconductor laser vertical external-cavity surface emitting laser optical pumping
摘要
利用周期谐振增益结构设计了以InGaAs/GaAsP/AlGaAs为有源区的980 nm二极管抽运垂直外腔面发射半导体激光器的材料结构。根据理论模型计算了纵模限制因子、阈值增益、光增益、输出功率等特征参量。优化了激光器特征参量并设计了光抽运垂直外腔面发射激光器的器件结构。理论计算表明,激光二极管(LD)抽运的垂直外腔面发射激光器的输出功率将大于1 W。
Abstract
Using period resonance gain structure, a laser diode (LD) pumped 980 nm vertical external-cavity surface-emitting laser (VECSEL) with active region of InGaAs/GaAsP/AlGaAs system is developed. The characteristic parameters such as longitudinal confinement factor, threshold gain, optical gain and output power etc. are calculated through theoretical model. With the optimized characteristic parameters, the structure of VECSEL is designed. Theoretical calculations show that the output power of a LD-pumped VECSEL can be higher than 1.0 W.
单肖楠, 路国光, 何春凤, 秦莉, 晏长岭, 王立军. 980 nm垂直外腔面发射激光器理论分析[J]. 中国激光, 2006, 33(suppl): 240. 单肖楠, 路国光, 何春凤, 秦莉, 晏长岭, 王立军. 980 nm Optical Pumped Semiconductor Vertical External Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Lasers, 2006, 33(suppl): 240.