红外与激光工程, 2002, 31 (4): 329, 网络出版: 2006-04-28
半导体激光器生长双波长超窄脉冲的实验研究
Dual-wavelength ultra-short pulse generation by use of semiconductor laser diode
摘要
描述了一种用腔外注入方式调制增益的法布里珀罗半导体激光器产生双波长超窄脉冲的简单方法。腔外注入功能部分包含一个直流工作的法布里珀罗半导体激光器、一个3dB光耦合器和两个布喇格型光纤光栅。双波长的选择和间距通过调节光栅来实现。文中描述的系统实现了在10nm的调节范围内边模压制率优于17dB的理想结果。整个系统简单、成本低
Abstract
An attractive alternative to generate tunable dual-wavelength pulses by external injection seeding of a gain-switched Fabry-Perot laser diode (FP-LD) is demonstrated. The external injection seeding branch consists of a FP-LD, a 3dB photo-coupler and two fiber Bragg gratings (FBG's). The dual wavelength can be selected and their spacing can be tuned by adjusting two FBG's. The side-mode-suppression-ratio (SMSR) is better than 17dB over a 10nm wavelength tuning range. The whole system is simple and costs lower.
张敏, 王东宁, 李宏, 靳伟, M S Demokan. 半导体激光器生长双波长超窄脉冲的实验研究[J]. 红外与激光工程, 2002, 31(4): 329. 张敏, 王东宁, 李宏, 靳伟, M S Demokan. Dual-wavelength ultra-short pulse generation by use of semiconductor laser diode[J]. Infrared and Laser Engineering, 2002, 31(4): 329.