为实现对硅基材料和MEMS器件内微体缺陷的无损、高效和准确检测,在研究广义洛仑兹-米氏散射理论的基础上,针对硅基材料和MEMS器件的物理特点,对球形缺陷与红外激光相互作用在非垂直方向散射光强分布特点进行了研究和计算机仿真,提出利用红外激光背散射分布分析对硅基材料和MEMS器件内部缺陷进行检测的方法,并通过实验验证了该方法的有效性.

The coherence of semiconductive material is an important assurance to realize the function of micro component. In order to detect micro bulk defects in silicic materials and MEMS components nondestructively, effectively and accurately, based on Generalized Lorenz-Mie Scattering theory, the scattering light intensity distribution of the interaction between spherical defects and infrared laser beam in non-vertical direction, which aim at the physical property of silicic materials and MEMS components, is studied, and the mathematical simulation by computer is done. A new method to detect micro defect in MEMS components by analyzing back scattering light intensity distribution of infrared laser is presented. The basic principle and theoretic model of the detection is introduced, and the validity and feasibility of the method are proven by experiment.