红外与激光工程, 2003, 32 (3): 259, 网络出版: 2006-04-28
Y1Ba2Cu3O7-x半导体薄膜的红外热辐射响应研究
Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film
摘要
采用直流磁控溅射后退火法制备了Y1Ba2Cu3O7-x/Si和Y1Ba2Cu3O7-x/ZrO2/SiO2两种半导体薄膜,对该薄膜进行了红外热辐射响应特性研究.采用X射线衍射、电阻温度系数法、喇曼散射表征手段对薄膜的显微结构进行了详细分析.结果表明,有过渡层的Y1Ba2Cu3O7-x半导体薄膜均匀性好,信噪比高,在红外波段和亚毫米波段甚至毫米波段都有良好的热辐射响应,适于制做非制冷探测器的敏感元.
Abstract
Y1Ba2Cu3O7-xsemiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y1Ba2Cu3O7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconductive Y1Ba2Cu3O7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y1Ba2Cu3O7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature
李然, 刘桂霞, 李冰冰, 孙强. Y1Ba2Cu3O7-x半导体薄膜的红外热辐射响应研究[J]. 红外与激光工程, 2003, 32(3): 259. 李然, 刘桂霞, 李冰冰, 孙强. Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film[J]. Infrared and Laser Engineering, 2003, 32(3): 259.