红外与激光工程, 2003, 32 (3): 259, 网络出版: 2006-04-28  

Y1Ba2Cu3O7-x半导体薄膜的红外热辐射响应研究

Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film
作者单位
1 长春工业大学,化工学院,吉林,长春,130012
2 天津大学,化工学院,天津,300072
3 中国科学院,长春光机与物理研究所,应用光学国家重点实验室,吉林,长春,130022
摘要
采用直流磁控溅射后退火法制备了Y1Ba2Cu3O7-x/Si和Y1Ba2Cu3O7-x/ZrO2/SiO2两种半导体薄膜,对该薄膜进行了红外热辐射响应特性研究.采用X射线衍射、电阻温度系数法、喇曼散射表征手段对薄膜的显微结构进行了详细分析.结果表明,有过渡层的Y1Ba2Cu3O7-x半导体薄膜均匀性好,信噪比高,在红外波段和亚毫米波段甚至毫米波段都有良好的热辐射响应,适于制做非制冷探测器的敏感元.
Abstract
Y1Ba2Cu3O7-xsemiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y1Ba2Cu3O7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconductive Y1Ba2Cu3O7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y1Ba2Cu3O7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature

李然, 刘桂霞, 李冰冰, 孙强. Y1Ba2Cu3O7-x半导体薄膜的红外热辐射响应研究[J]. 红外与激光工程, 2003, 32(3): 259. 李然, 刘桂霞, 李冰冰, 孙强. Study on IR thermal radiation response of Y1Ba2Cu3O7-x semiconductive thin film[J]. Infrared and Laser Engineering, 2003, 32(3): 259.

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