利用量子干涉效应,提出设计GaAs/Al_xGa_1-xAs量子阱红外探测器能带结构的方法.此法比K-P方法简便易行,而且随着势垒宽度的增加,两种方法所得结果趋于一致.这表明新方法更适合计算具有较宽势垒超晶格的电子态.另外,用新方法对超晶格样品的光电流谱进行了分析,所得结果比K-P方法更接近实验值.由此证实了量子干涉效应引起的电子能态的存在和新方法在量子阱红外探测器能带结构设计中的实用性.

The electronic states of GaAs/Al_xGa_1-xAs superlattices are calculated by the quantum interference effect. Compared with the K-P method, it is found that the results of two methods are accordance with the increase of the barrier width. This indicates the new method is suitable for calculating the electronic states of superlattice with the wider barrier,and is easier to manipulate than the K-P method. In addition, the photocurrent spectrum of superlattice sample is analyzed by two methods. As a result, the data given by the new method is closer to the experimental results than that by the K-P method. This confirms that the electronic states caused by the quantum interference effect exist in superlattice, and the new method can be applied to design energy band structure of the infrared photodetector.