强激光与粒子束, 2005, 17 (1): 25, 网络出版: 2007-06-07   

1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响

Influence of 1MeV electron irradiation on HgCdTe photovoltaic detectors
作者单位
1 上海技术物理研究所,传感技术国家重点实验室,上海,200083
2 中国科学院研究生院,北京,100039
摘要
研究了1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响.通过测试电子辐照前后光伏探测器的响应光谱、信号、噪声、暗电流等性能参数,分析了电子辐照对Hg1-xCdxTe光伏器件的影响机制.实验结果发现:电子辐照后器件响应光谱在短波处有变窄的趋势,但响应峰值波长和截止波长基本无变化;随着辐照剂量的增加,通过p-n结的暗电流有所增加,光伏器件的探测率有减小的趋势.
Abstract
In this paper, radiation effects of 1 MeV electron on short wavelength Hg1-xCdxTe photovoltaic detectors have been studied. Response spectrum, current-voltage characterization and detectivity were measured before and after irradiation to analyze the radiation effects. It's been observed that after irradiation, the response spectra of detectors become narrower at shot wavelength while the peak and cut-off wavelength have no noticeable change. The dark current of devices increases with the irradiation dosage increasing and the detectivity thus decreases.

黄杨程, 乔辉, 贾嘉, 李向阳, 龚海梅. 1 MeV电子辐照对短波Hg1-xCdxTe光伏探测器的影响[J]. 强激光与粒子束, 2005, 17(1): 25. HUANG Yang-cheng, QIAO Hui, JIA Jia, LI Xiang-yang, GONG Hai-mei. Influence of 1MeV electron irradiation on HgCdTe photovoltaic detectors[J]. High Power Laser and Particle Beams, 2005, 17(1): 25.

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