强激光与粒子束, 2005, 17 (4): 515, 网络出版: 2006-04-28
CCD在fs激光辐照下的损伤研究
Research on femtosecond laser induced damage to CCD
摘要
用脉宽为60 fs、波长为800nm的fs激光辐照电荷耦合器件,研究了电荷耦合器件在fs激光作用下的失效问题.实验得到fs激光作用下电荷耦合器件的失效阈值为4.22×10-3J/cm2.这比ns激光作用下电荷耦合器件的损伤阈值低2~3个量级.对该器件进行显微观测,在光敏元上没有发现损伤,但在器件的栅极上发现了明显的激光引起的损伤痕迹.
Abstract
The failure of charge coupled devices (CCD ) irradiated by 800nm fs laser with pulse duration of 60 fs was studied.The result shows that the failure threshold of CCD irradiated by fs laser is 4.22×10-3 J/cm2. and it is 2~3 order lower than the failare threshold of CCD irradiated by ns laser. According to the micro-analysis of CCD, it is found that the damage does not take place at the light activated elements but at the grid electrode of the device.
江继军, 罗福, 陈建国. CCD在fs激光辐照下的损伤研究[J]. 强激光与粒子束, 2005, 17(4): 515. JIANG Ji-jun, LUO Fu, CHEN Jian-guo. Research on femtosecond laser induced damage to CCD[J]. High Power Laser and Particle Beams, 2005, 17(4): 515.