红外与毫米波学报, 2004, 23 (1): 64, 网络出版: 2006-05-10
非致冷红外探测器用氧化钒多晶薄膜的制备
FABRICATION OF VANADIUM OXIDES POLYCRYSTALLINE THIN FILM FOR UNCOOLED IR DETECTORS
氧化钒薄膜 离子束溅射 电阻温度系数 非致冷红外探测器 vanadium oxides thin film ion beam sputtering temperature coefficient of resistance uncooled IR detectors
摘要
采用离子束溅射镀膜和氧化工艺在Si(110)和石英衬底上制备了用于非致冷红外探测器阵列热敏材料的混合相氧化钒多晶薄膜.扫描电子显微镜(SEM)照片显示:薄膜表面呈针状晶粒状,而且薄膜表面光滑、致密,均匀性好.测试结果表明:氧化钒薄膜的方块电阻和电阻温度系数(TCR)在20℃分别为50KΩ和-0.021K-1.
Abstract
Polycrystalline Vanadium Oxides thin films deposited on Si(110) and quartz substrates for thermo-sensitive material of uncooled IR detector arrays were fabricated by ion beam sputtering deposition and oxide process.SEM photography indicates that VO x thin films with acerose crystal constructor are smooth, compact and uniform. The test result shows that the square resistance and the temperature coefficient of resistance(TCR) of the VO x thin film are 50KΩ and -0.021K-1 at 20℃, respectively.
王宏臣, 易新建, 陈四海, 黄光, 李雄伟. 非致冷红外探测器用氧化钒多晶薄膜的制备[J]. 红外与毫米波学报, 2004, 23(1): 64. 王宏臣, 易新建, 陈四海, 黄光, 李雄伟. FABRICATION OF VANADIUM OXIDES POLYCRYSTALLINE THIN FILM FOR UNCOOLED IR DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(1): 64.
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