红外与毫米波学报, 2005, 24 (2): 140, 网络出版: 2006-05-10
变磁场I-V法对碲镉汞光伏器件少子扩散特性的研究
STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD
变磁场 I-V测试 短波红外 碲镉汞光伏器件 少子扩散长度 variational magnetic field I-V test SWIR HgCdTe photodiodes minority carrier diffusion length
摘要
零偏压电阻-面积乘积(R0A)和反向饱和电流密度J0是决定光电二极管性能的重要参数.提出了一种对碲镉汞(Hg 1-xCdxTe)光伏器件的少子扩散特性进行研究的有效方法.利用变磁场下的电流-电压(I-V)测试,得到了组分x在0.5与0.6之间的器件R0A和J0随磁场强度B变化的函数关系.由实验结果估算得到了室温工作的短波红外(SWIR)碲镉汞光伏器件的少子扩散长度.其数值与用激光诱导电流(LBIC)方法得到的相一致.
Abstract
The zero-bias resistance area product (R 0A) and the saturation current density J 0 are both key parameters to give an indication of photodiode performance. In this study, an effectual experimental method to study the minority carrier diffusion characteristics of Hg ~1-xCd xTe photodiodes was presented. By I-V tests in a variational magnetic field B, R 0A and J 0 measurements were carried out as a function of B in the alloy composition range 0.5 < x < 0. 6. Based on the test results,the minority carrier diffusion length of shortwavelength infrared ( SW IR) HgCdTe photodiodes operating at room temperature was calculated. The value is in agreementwith the scale measured by laser beam induced current (LB IC)method.
贾嘉, 陈新禹, 李向阳, 龚海梅. 变磁场I-V法对碲镉汞光伏器件少子扩散特性的研究[J]. 红外与毫米波学报, 2005, 24(2): 140. 贾嘉, 陈新禹, 李向阳, 龚海梅. STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD[J]. Journal of Infrared and Millimeter Waves, 2005, 24(2): 140.
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