报道了激光束诱导电流(LBIC)在碲镉汞(HgCdTe)红外双色探测器工艺检测中的应用.通过LBIC测试,发现p型HgCdTe材料由B+离子注入损伤形成的n区面积大于其注入面积,并获得n区横向的精确分布.同时,运用LBIC,获得了p型HgCdTe材料因不同能量的等离子体干法刻蚀诱导的刻蚀台面侧壁工艺损伤形成的n区横向分布,并得到了n区横向宽度与等离子体能量的关系.

The application of laser beam induced current(LBIC)for the technology detecting of Mercury-Cadmium-Telluride(HgCdTe)infrared two-color detector was presented.By LBIC test,it ws found that the area of n-type region derived from p-type HgCdTe having been implanted by Boron ion was larger than the area to be implanted,and the precise transversal distribution of this n region was also obtained.At the same time,the transversal distributions of plasma etching induced n-type doping HgCdTe from p-type material among the side wall of etched mesa was obtained,and the relation between the transversal width of this n-type region and the energy of etching plasma was also achieved.