红外与毫米波学报, 2001, 20 (1): 66, 网络出版: 2006-05-10  

GaAs/AlGaAs量子阱红外探测器的光荧光表征

PHOTOLUMINE SCENCE CHARACTERIZATION IN GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTORS
作者单位
1 中国科学院上海技术物理研究所,红外物理国家实验室,上海200083
2 中国科学院物理研究所, 北京,100080
摘要
对GaAs/AlGaAs量子阱红外探测器器件进行显微荧光光谱(μ-PL)测量,光谱中表征势垒、势阱基态间光跃迁能量位置的荧光峰直接与势垒中Al含量相关,通过光谱实验上对势垒和量子阱带间跃迁能量的确定并结合有效质量理论的计算,获得了Al组分和阱宽值,并由此推算出相应的红外探测响应波长,与光电流谱的实验结果相比吻合良好.这种材料的测量结果有利于器件制备的材料筛选.
Abstract
Micro-photoluminescence (μ-PL) measurement w as performed on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). The PL peaks in the multi-quantum wells (MQWs), which reveal the energy positions of band-to-band transitions in the barrier and the well, respectively, are directly related to the Al component in the barrier of AlxGa1-xAs. Us ing standard effective mass theory for quantum wells the realistic Al compone ntx and well widthd were deduced. Consequently the peak response wavel ength λp of the QWIP was determined. The calculated λp is coincide nt with the result from photocurrent spectrum for the same sample very well. It proves that the present method is very applicable for the MQW materials con trol in the process of device fabrication.

蔡炜颖, 李志锋, 李宁, 陆卫, 沈学础, 周均铭, 黄绮. GaAs/AlGaAs量子阱红外探测器的光荧光表征[J]. 红外与毫米波学报, 2001, 20(1): 66. 蔡炜颖, 李志锋, 李宁, 陆卫, 沈学础, 周均铭, 黄绮. PHOTOLUMINE SCENCE CHARACTERIZATION IN GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTORS[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 66.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!