强激光与粒子束, 2001, 13 (1): 15, 网络出版: 2006-05-15
X射线在重金属-二氧化硅界面的剂量增强的模拟计算
Simulative calculation of the dose enhancement factor of W-SiO2 and Ta-SiO2 interface
摘要
当X射线射入不同材料组成的界面时,在低牂材料的一侧将产生剂量增强.介绍了界面剂量增强效应的基本原理,并用MCNP蒙特-卡罗程序计算了钨-二氧化硅、钽-二氧化硅界面的剂量增强因子.计算结果表明在X射线能量为100～150keV时,界面附近二氧化硅一侧存在较大的剂量增强.
Abstract
The dose would be enhanced in low Z material when X-ray enters the interface which is constructed with different materials.The mechanic of dose enhancement is introduced in this article,and the dose enhancement factors of W-SiO2、Ta-SiO2 interface are calculated in the article.The calcuated results demonstrate that there exits stronger dose-enhancement in the SiO2 side near the interface when the energy of X-ray is between 100keV and 150keV.
牟维兵, 陈盘训. X射线在重金属-二氧化硅界面的剂量增强的模拟计算[J]. 强激光与粒子束, 2001, 13(1): 15. 牟维兵, 陈盘训. Simulative calculation of the dose enhancement factor of W-SiO2 and Ta-SiO2 interface[J]. High Power Laser and Particle Beams, 2001, 13(1): 15.
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