研究了利用GaAs的双光子诱导吸收实现调Q激光脉冲展宽的原理,分析了GaAs的光吸收特性,建立了激光器速率方程并给出了数值解。在实验上,将GaAs薄片放入一电光调QNd:YAG激光器谐振腔中,同理论预测一样,激光输出脉冲的能量、峰值功率都低于常规调Q激光脉冲,同时脉冲宽度得到了展宽。

We have demonstrated the theory of utilizing internal two-photon-induced light absorption of semiconductor GaAs to accomplish Q-switched pulse lengthening. The rate equations are solved and the experiments are performed with an electrooptic Q-switching Nd:YAG laser with a GaAs sample in its cavity. As predicted by the theory that the output intensity and output energy both decrease and pulse length increases as compared with the normal Q-switched case. We were able to obtain pulses as long as 1～μs.