量子电子学报, 2003, 20 (1): 26, 网络出版: 2006-05-15
新型Q开关晶体Cr4+:YAG的生长和被动调Q研究
Research on Crystal Growth and Passively Q-switching of Cr4+:YAG
晶体生长 退火 被动调Q 灯泵Nd:YAG激光器 Cr4+:YAG Cr4+:YAG crystal growth annealing passively Q-switching lamp pumped Nd:YAG laser
摘要
本工作采用二价Ca离子作为电荷补偿离子由提拉法生长出了具有高光学质量的调Q开关晶体Cr4+:YAG.所生长的晶体在空气中退火(1450℃)50小时后,晶体的颜色明显加深.吸收光谱测量表明晶体中的Cr4+离子浓度得到显著提高.在闪光灯泵浦的Nd:YAG激光器上对不同透过率、退火后的Cr4+:YAG晶体进行了被动调Q实验.结果表明所生长出的Cr4+:YAG晶体对Nd:YAG激光器具有很好的调Q作用.
Abstract
We grew Cr4+:YAG crystal with high optical quality by Czochralski method using divalent Ca ions as charge compensation ions. Furthermore, we also annealed the as-grown crystal in air at 1450℃ for 50 hours. Absorption spectra show that the content of Cr4+ ions and absorption coefficient at 1.06μm in Cr4+:YAG crystal annealed increase remarkably. In addition, we also researched Q-switching experiments of lamp pump Nd:YAG laser using Cr4+:YAG crystal with different thickness as absorbers. The results indicate that grown Cr4+:YAG crystal can Q-switch effectively Nd:YAG laser.
黄朝红, 肖敬忠, 张庆礼, 赵南京, 王爱华, 殷绍唐, 余吟山. 新型Q开关晶体Cr4+:YAG的生长和被动调Q研究[J]. 量子电子学报, 2003, 20(1): 26. 黄朝红, 肖敬忠, 张庆礼, 赵南京, 王爱华, 殷绍唐, 余吟山. Research on Crystal Growth and Passively Q-switching of Cr4+:YAG[J]. Chinese Journal of Quantum Electronics, 2003, 20(1): 26.