中国激光, 2006, 33 (4): 543, 网络出版: 2006-05-17   

一种新的光刻机多成像质量参数的原位检测技术

An Novel Technique for Measuring Full Image Quality of Lithography Tools in Situ
作者单位
1 中国科学院上海光学精密机械研究所信息光学实验室, 上海 201800
2 中国科学院研究生院, 北京 100039
摘要
随着光刻特征尺寸的不断减小,尤其是随着分辨力增强技术的使用,像质参数的原位检测已成为先进的投影光刻机中不可或缺的功能。然而现有的每种技术均只能检测有限的几种像质参数。提出了一种新的基于像传感器的光刻机多成像质量参数原位检测(MIQM)技术。该技术通过对原有的测量模型进行修正和扩展,从而在精确测量低阶成像质量参数的同时能高精度地测量高阶成像质量参数。此外,该技术是基于空间像测量的像质参数原位检测技术,从而具有速度快、稳定性好等优点。通过该技术的低阶像质参数测量精度与原有技术相近,而高阶像质参数测量重复精度优于1 nm。实验结果表明该技术能一次完成步进扫描投影光刻机的多个像质参数的精确测量,从而简化了光刻机像质检测过程,大量节约了测量时间,有效避免了像质参数之间的互相影响。
Abstract
As feature size shrinks, especially with the use of resolution enhancement techniques, accurate measurement of image quality parameters in situ is indispensable for the lithographic tools. But the full image quality parameters can not be measured by an individual measurement method. A novel method for measuring full image quality of lithography tools in situ with transmission image sensor, i.e. mutiple image quality measurement (MIQM), is proposed. The high order image quality parameters and the low order image quality parameters can be obtained by the method simultaneously. The method also processes the advantage of time-saving and robustness, as it is a straightforward measurement method based on the aerial image measurement. The experiments results show that the measurement accuracy of the low order image quality parameters using the method is close to that using the previous methods, and the measurement repeatability of the high order image quality using the method is better than 1 nm. Compared to the previous measurement techniques, the method avoids the dependency of measurement accuracy on the cross talk of the image quality parameters, makes it much simpler to perform a full-scale evaluation of lithographic tools.

王帆, 王向朝, 马明英, 张冬青, 施伟杰. 一种新的光刻机多成像质量参数的原位检测技术[J]. 中国激光, 2006, 33(4): 543. 王帆, 王向朝, 马明英, 张冬青, 施伟杰. An Novel Technique for Measuring Full Image Quality of Lithography Tools in Situ[J]. Chinese Journal of Lasers, 2006, 33(4): 543.

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