采用螺旋波等离子体辅助溅射技术制备了自然掺杂及N-Al共掺杂ZnO薄膜，对两种不同类型掺杂薄膜的低温光致发光(PL)特性进行了研究。实验结果表明，二者均呈现出了较强的与受主能级相关的发光特征，自然掺杂薄膜的光致发光谱在404.0 nm处出现了由于锌空位产生的近带边发光，N-Al共掺杂薄膜的光致发光谱在383.0 nm处出现了N作为受主的施主-受主对(DAP)跃迁发光。两种薄膜的发光特性比较分析表明，N-Al共掺杂技术能够有效提高N的固溶度，N受主能级密度增加使薄膜表现出较强的施主-受主对跃迁发光，表明该技术为实现p型ZnO薄膜制备的有效方法。

ZnO films naturally doped and codoped with N and Al are deposited by helicon wave plasma assisted sputtering method. Their photoluminescence (PL) properties have been studied at low temperature. Experiments results show that the acceptor-related PL can be observed in the two kinds of films. The near-band-edge emission around 404.0 nm induced by the zinc vacancy is observed in the film naturally doped, whereas the donor-acceptor pair (DAP) transition luminescence around 383.0 nm in which N acts as the acceptor is observed in the film codoped with N and Al. The comparison between two PL shows that codoped method with N and Al can efficiently improve the dissolvability of N in the films, in which the acceptor-related levels can be easily introduced and the DAP PL can be observed. It is indicated that codoped with N and Al is an efficient method to produce p-type ZnO films.