应用光学, 2001, 22 (2): 35, 网络出版: 2006-05-19
高质量氮化镓材料的光致发光研究
STUDY ON PHOTOLUMINESCENCE OF HIGH QUALITY GaN
摘要
利用氨气源分子束外延(GSMBE)技术,在改型Ⅳ型分子束外延设备上生长高质量GaN单晶外延材料,并对样品进行了光致发光测量。分析室温和低温光致发光谱,系统地研究GaN的发光峰及其起源,并对常见的黄色发光带现象及其微结构起因进行探讨。
Abstract
The high quality GaN epilayers grown on (0001) sapphire substrates using a modified home-made gas source MBE system are investigated by room and low temperature photoluminescence(PL).The origins of the different peaks in the PL spectra of the high quality GaN films are systematically analyzed,and the origin of always observed strong yellow luminescence centered at 2.2eV is studied.
王军喜, 孙殿照, 王晓亮, 刘宏新, 刘成海, 曾一平, 李晋闽, 林兰英, 侯洵. 高质量氮化镓材料的光致发光研究[J]. 应用光学, 2001, 22(2): 35. 王军喜, 孙殿照, 王晓亮, 刘宏新, 刘成海, 曾一平, 李晋闽, 林兰英, 侯洵. STUDY ON PHOTOLUMINESCENCE OF HIGH QUALITY GaN[J]. Journal of Applied Optics, 2001, 22(2): 35.
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