DILL曝光模型和MACK显影模型,编制了接触式曝光系统的厚层抗蚀剂光刻模拟软件,用其分析在理想曝光剂量条件下,抗蚀剂显影后的线宽和侧壁陡度随显影时间的变化规律,分析得出了给定厚度的抗蚀剂的显影时间,为实验工艺上严格控制显影时间提供依据.

: During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns. Based on the Dill model and Mack model, this paper work out the lithography simulation software of thick resist, analyze the variation rules of line width and sidewall of developed profile with ideal exposure dose, get the development time of given resist thickness and hope to offer a base to control development time rigorously in the experiment procedure.