光子学报, 2005, 34 (1): 11, 网络出版: 2006-06-12
用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模
Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror
半导体可饱和吸收镜 表面态 调Q锁模 Yb∶YAG激光器 Semiconductor saturable absorption mirror Surface state Q-switched modelocking Yb∶ YAG laser
摘要
制作了一种新型的半导体可饱和吸收镜--表面态型半导体可饱和吸收镜.用表面态型半导体可饱和吸收镜作为被动锁模吸收体实现了半导体端面泵浦Yb∶YAG激光器被动调Q锁模.在泵浦功率仅有1.4 W的情况下,获得了调Q锁模脉冲序列,锁模平均输出功率1 mW,锁模脉冲重复频率200 MHz.
Abstract
A new type of surface-state semiconductor saturable absorption mirror was introduced, with which passive Q-switched modelocking of diode-end-pumped Yb∶ YAG laser was realized. At the 1.4 W of pumping power, Q-switched modelocking seires was obtained, which has 1 mW average output and 200 MHz frequency.
王勇刚, 马骁宇, 居桂方, 张志刚. 用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模[J]. 光子学报, 2005, 34(1): 11. 王勇刚, 马骁宇, 居桂方, 张志刚. Passive Q-switched Modelocking Diode-end-pumped Yb∶YAG with Surface-state Type of Semiconductor Saturable Absorption Mirror[J]. ACTA PHOTONICA SINICA, 2005, 34(1): 11.
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