在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器(VCSEL)外延片.P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析.室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm.在X射线双晶衍射回摆曲线中,除了"0"级衍射峰外,还观察到一级和二级卫星峰."0"级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″."0"级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.

The structure of Vertical-Cavity Surface-Emitting Lasers (VCSEL) has been grown on (100)2° off toward <111>A n-GaAs(Si) substrate by MBE. The numbers of reflectors in top and bottom Distributed Bragg Reflector (DBR) structures are 24.5 pairs and 34.5 pairs, respectively. The high quality VCSEL structure is characterized by PL, SEM and X-ray double crystal diffraction (XRD). The peak wavelength of PL spectrum is 837.0 nm and the FWHM is 28.9 nm at room temperature. The structure parameters of VCSEL are obtained from the rocking curve. The first and second satellite peaks around the main (“0” level) reflection peak appear in the rocking curve. The FWHM of diffraction peaks of “0” level and GaAs substrate are 12.56″ and 11.79″, respectively, which are quite close, showing much higher integrity of the crystal lattice. The experimental results show that the resonant wavelength of cavity modes (837.2 nm) and the peak wavelength of PL spectrum are well matched.