Chinese Optics Letters, 2003, 1 (5): 05308, Published Online: Jun. 6, 2006   

Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna Download: 521次

Author Affiliations
1 Department of Applied Physics, Xi’an University of Technology, Xi’an 710048
2 Center for Terahertz Research, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Abstract
We observe enhanced terahertz (THz) radiation generated from a Si_(3)N_(4) film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si_(3)N_(4) film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si_(3)N_(4) film-coated layer.

Wei Shi, Jingzhou Xu, X.-C. Zhang. Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna[J]. Chinese Optics Letters, 2003, 1(5): 05308.

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