Chinese Optics Letters, 2003, 1 (8): 08472, Published Online: Jun. 6, 2006  

Experimental study of mode characteristics for equilateral triangle semiconductor microcavities Download: 624次

Author Affiliations
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2 State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
Abstract
Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 μm. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.

Qiaoyin Lu, Xiaohong Chen, Weihua Guo, Lijuan Yu, Yongzhen Huang, Jian Wang, Yi Luo. Experimental study of mode characteristics for equilateral triangle semiconductor microcavities[J]. Chinese Optics Letters, 2003, 1(8): 08472.

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