A passively Q-switched diode pumped Yb:YAG microchip laser

Haisheng Wu; Ping Yan; Mali Gong; Qiang Liu

Chinese Optics Letters, 2003, 1 (12): 12697, Published Online: Jun. 6, 2006

A passively Q-switched diode pumped Yb:YAG microchip laser Download： 1111次

Haisheng Wu ^*Ping Yan Mali Gong Qiang Liu

Author Affiliations

Digital Photonics Laboratory, Department of Precision Instruments, Tsinghua University, Beijing 100084

140.3540 lasers Q-switched 140.3480 lasers diode-pumped 140.3580 lasers solid-state

Abstract

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr^(4+):YAG saturable absorber mirror is reported. The TEM00 laser pulses are obtained with 1.7-μJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and Ф5 × 0.6 mm^(2), respectively.

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Haisheng Wu, Ping Yan, Mali Gong, Qiang Liu. A passively Q-switched diode pumped Yb:YAG microchip laser[J]. Chinese Optics Letters, 2003, 1(12): 12697.