Chinese Optics Letters, 2004, 2 (1): 0131, Published Online: Jun. 6, 2006
Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs Download: 638次
Abstract
We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.
Yonggang Wang, Xiaoyu Ma, Bin Zhong, Desong Wang, Qiulin Zhang, Baohua Feng. Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs[J]. Chinese Optics Letters, 2004, 2(1): 0131.