Chinese Optics Letters, 2004, 2 (4): 04226, Published Online: Jun. 6, 2006
Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method 
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250.3140 integrated optoelectronic circuits 140.3490 lasers distributed-feedback 250.7360 waveguide modulators 230.5590 quantum-well devices
Abstract
An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.
Baoxia Li, Xiaohua Hu, Hongliang Zhu, Baojun Wang, Lingjuan Zhao, Wei Wang. Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method[J]. Chinese Optics Letters, 2004, 2(4): 04226.
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