Chinese Optics Letters, 2004, 2 (6): 06359, Published Online: Jun. 6, 2006
Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum 
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Abstract
A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.
Shurong Wang, Hongliang Zhu, Zhihong Liu, Ruiying Zhang, Ying Ding, Lingjuan Zhao, Fan Zhou, Jing Bian, Lufeng Wang, Wei Wang. Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum[J]. Chinese Optics Letters, 2004, 2(6): 06359.
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