光电子技术, 2004, 24 (1): 1, 网络出版: 2006-06-08  

真空蒸发法择优定向生长ZnO薄膜

Preferred Orientation Growth of ZnO Films by Vacuum Evaporation
作者单位
1 重庆大学应用物理系,重庆,400044
2 重庆师范大学物理系,重庆,400047
摘要
研究了(002)向择优生长ZnO薄膜.利用真空蒸发法制备ZnO薄膜,衬底材料是镜面抛光石英片.实验结果表明,用此方法可获得高度择优定向生长的ZnO薄膜,氧化退火温度对ZnO薄膜的结构有重要影响.
Abstract
ZnO films with(002) preferred orientation growth were investigated. The ZnO films were synthesized by vacuum evaporation on mirror-polished quartz substrates. Experimental results showed that highly preferred growth of ZnO films has been achieved by the confirmation of X-ray diffraction. It was also found that post-annealing treatment has an important effect on ZnO films structure.

马勇, 王万录, 廖克俊, 吕建伟, 孙晓楠. 真空蒸发法择优定向生长ZnO薄膜[J]. 光电子技术, 2004, 24(1): 1. 马勇, 王万录, 廖克俊, 吕建伟, 孙晓楠. Preferred Orientation Growth of ZnO Films by Vacuum Evaporation[J]. Optoelectronic Technology, 2004, 24(1): 1.

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