光电子技术, 2004, 24 (3): 151, 网络出版: 2006-06-08
Cu2SnS3薄膜的制备及性能研究
Study on the Preparation and Their Properties of Cu2SnS3 Thin Films
Cu2SnS3薄膜 LBL(layer-by-layer)法 结构特性 光学特性 Cu2SnS3thin films LBL （layer-by-layer） method structural property optical property
摘要
采用LBL(layer-by-layer)法制备了Cu2SnS3薄膜.即首先采用电化学方法在SnO2衬底上制备SnS薄膜,然后又在其上用化学沉积法制备CuS薄膜,最后进行退火处理得到厚度约为960 nm的Cu2SnS3薄膜.探讨了薄膜的制备机理、生长速度、结构和光学特性.制备的薄膜为多晶(Cu2SnS3)72z(三斜或假单斜晶系)结构,其直接光学带隙约为1.05 eV.
Abstract
In this paper, Cu2SnS3 was prepared with LBL (layer-by-layer) method, in which SnS thin film was first electrodeposited on SnO2 transparent conducting glass substrate, and then CuS thin film was prepared on it with chemical bath deposition method, at last, thermal annealing of this double layer specimen was performed in order to obtain Cu2SnS3 thin film. The thickness of the as-prepared film is 960 nm. The mechanism of the methods was explored; the growing rate and the structural & optical properties of the films were also studied. The as-prepared films are of polycrystalline (Cu2SnS3)72z with triclinic (pseudo-monoclinic) structure. The direct optical band gap of the film is 1.05 eV.
杜金会, 于振瑞, 张加友, 王妍妍, 李正群. Cu2SnS3薄膜的制备及性能研究[J]. 光电子技术, 2004, 24(3): 151. 杜金会, 于振瑞, 张加友, 王妍妍, 李正群. Study on the Preparation and Their Properties of Cu2SnS3 Thin Films[J]. Optoelectronic Technology, 2004, 24(3): 151.
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