中国激光, 2003, 30 (12): 1107, 网络出版: 2006-06-27
氧化钒薄膜的制备及其光电特性研究
Preparation of VO2 Thin Film and Study on Its Optical and Electrical Properties
薄膜技术 氧化钒薄膜 温度相变特性 光电特性 微光开关 thin film technique VO2 thin film temperature-phase transition properties optoelectric properties micro-optical switching
摘要
采用一种新工艺在Si和Si3N4衬底上制备了性能优良的氧化钒薄膜,并对其微观结构和光电特性进行了研究。测试结果表明采用新工艺所制备的氧化钒薄膜在相变前后电阻率变化达到3个数量级,红外透过率在相变前后改变达到60%。
Abstract
This paper presents a new method of preparation of VO2 thin film with a good performance and studies its microstructure, optical and electrical properties. The test results show that comparing before and after phase transition, the resistivity changes about 103 orders, and the IR transmittance changes up to 60%.
王宏臣, 易新建, 陈四海, 黄光, 李雄伟. 氧化钒薄膜的制备及其光电特性研究[J]. 中国激光, 2003, 30(12): 1107. 王宏臣, 易新建, 陈四海, 黄光, 李雄伟. Preparation of VO2 Thin Film and Study on Its Optical and Electrical Properties[J]. Chinese Journal of Lasers, 2003, 30(12): 1107.