Chinese Journal of Lasers B, 1999, 8 (5): 389, 网络出版: 2006-08-08
InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic
InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic
摘要
Abstract
It is reported on realization of pulsed operation of InGaAs/InGaAlAs strain-compensated multiple-quantum-well lasers at room temperatures. The working wavelength is 1.56 μm;the threshold current density for the stripe waveguide lasers is less than 1.85 kA/cm2;for the ridge waveguide lasers,the threshold current is 35 mA. The incorporation of compensated strain,which makes the multiple-quantum-well design applicable,leads to an obvious improvement on device temperature characteristic.
SUN Ke, WANG Jianhua, ZHOU Dan, PENG Jihu. InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic[J]. Chinese Journal of Lasers B, 1999, 8(5): 389. SUN Ke, WANG Jianhua, ZHOU Dan, PENG Jihu. InGaAs/InGaAlAs Strain-compensated Multiple-quantum-well Lasers with Improved Temperature Characteristic[J]. 中国激光(英文版), 1999, 8(5): 389.