Chinese Journal of Lasers B, 2000, 9 (2): 107, 网络出版: 2006-08-08  

Nd:Sr5(PO4)3F Crystal Laser Characteristics Using GaAs as Passive Q-switch

Nd:Sr5(PO4)3F Crystal Laser Characteristics Using GaAs as Passive Q-switch
作者单位
1 Optics Department, Shandong University, Jinan 250100, China
2 Institute of Crystal Materials, Shandong University, Jinan 250100, China
3 Zibo Electronic Materials Factory, Zibo 255086, China
摘要
Abstract
It is investigated the properties of a diode-pumped Nd: Sr5 ( PO4 )3F laser that is passively Q-switched by a thin, single crystal GaAs wafer. The short high-peak-power pulses of the laser have been obtained. The pulse energies, pulse widths and pulse repetition rates for different conditions have been measured and the experimental results show that GaAs is an excellent passive Q-switch of the diode-pumped Nd: Sr5(PO4)3F lasers.

LI Ping, WANG Qingpu, ZHANG Xinyu, ZHAO Shenzi, GAO Da, LIU Xunmin, SUN Lianke, ZHANG Shaojun, HUANG Bobiao, LIN Benfu, ZHANG Fanwen. Nd:Sr5(PO4)3F Crystal Laser Characteristics Using GaAs as Passive Q-switch[J]. Chinese Journal of Lasers B, 2000, 9(2): 107. LI Ping, WANG Qingpu, ZHANG Xinyu, ZHAO Shenzi, GAO Da, LIU Xunmin, SUN Lianke, ZHANG Shaojun, HUANG Bobiao, LIN Benfu, ZHANG Fanwen. Nd:Sr5(PO4)3F Crystal Laser Characteristics Using GaAs as Passive Q-switch[J]. 中国激光(英文版), 2000, 9(2): 107.

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