中国激光, 2000, 27 (3): 203, 网络出版: 2006-08-09
低偏振灵敏度半导体光放大器
Semiconductor Optical Amplifier with Low Polarization Sensitivity
半导体光放大器 偏振灵敏度 应变量子阱 小信号增益 semiconductor optical amplifier polarization sensitivity strained quantum wells small signal gain
摘要
报道了基于混合应变量子阱材料的半导体光放大器(SOA)。利用张应变量子阱加强了TM模的增益,使之接近TE模的增益,从而使SOA的偏振灵敏度大为降低。在150 mA的偏置下,获得了24 dB的小信号增益和1 dB的偏振灵敏度。
Abstract
This paper reports 1.31 μm waveband semiconductor optical amplifier (SOA) based on tensile strained quantum wells and compress strained quantum wells. For TM mode the gain is enhanced by tensile strained quantum wells, the SOA performs with low polarization sensitivity. Under the condition of 150 mA bias current, the SOA shows 24 dB small signal gain and 1 dB polarization sensitivity.
段子刚, 张哲民, 刘德明, 黄德修, 金锦炎, 杨新民, 王彩玲. 低偏振灵敏度半导体光放大器[J]. 中国激光, 2000, 27(3): 203. 段子刚, 张哲民, 刘德明, 黄德修, 金锦炎, 杨新民, 王彩玲. Semiconductor Optical Amplifier with Low Polarization Sensitivity[J]. Chinese Journal of Lasers, 2000, 27(3): 203.