从半导体激光器产生的热量在热沉中的扩散入手，对列阵单元器件间的热相互作用进行了分析，提出了该过程是通过热流的扩散而发生作用的观点。通过这一分析获得了确定列阵器件中单元器件间距的理论依据。对二维列阵中上、下层器件的热相互影响以及脉冲工作的占空比进行了讨论，并将结果应用到1.55 μm半导体激光列阵器件中。采用漏光波导结构的单元器件，实现了二维2×<参考文献原文>2×4两种列阵，其脉冲输出峰值功率分别达到7 W和11 W。

Considering the diffusion of heat generated by semiconductor lasers in the heat sink, the thermal interaction among single devices in the array have been analyzed. The idea of the thermal interaction caused from the diffusion of heat current is proposed. From analyses, how to determine the separation between upper and lower devices in the 2D array and how to select the duty cycle in the pulsed operation have been studied. The result of analyses has been applied to design the 1.55 μm wavelength semiconductor laser array. Two kinds of 2D arrays of 2×2, 2×4 consisted of single devices with leaky waveguide structure with their pulsed peak power output of 7 W and 11 W, respectively, have been completed.