光学学报, 2000, 20 (6): 744, 网络出版: 2006-08-09
GaAs被动调Q Nd:YAG激光器激光特性的研究
Study of a Passively Q-Switched Nd:YAG Laser with GaAs
摘要
报道了用半导体材料GaAs实现氙灯抽运Nd:YAG激光器的被动调Q运转, 测量了激光器的阈值、 脉冲宽度和输出能量。 从GaAs的能级结构出发, 理论上研究了GaAs材料的饱和吸收原理, 建立了调Q激光器速率方程并给出了数值解, 对理论结果与实验结果进行了比较和讨论。
Abstract
A passively Q-switched Nd:YAG laser using a semi-insulating GaAs is demonstrated. The laser characteristics, such as the threshold, single pulse energy and the pulse width were measured. Meanwhile, The saturable absorption dynamics is studied based on the energy-level structure. The rate equations and their numerical solutions for GaAs as passive Q switch were given. The experimental and theoretical results are compared and discussed.
李平, 王青圃, 高达, 张其第, 孙连科, 刘训民, 张少军, 林本付, 张凡文. GaAs被动调Q Nd:YAG激光器激光特性的研究[J]. 光学学报, 2000, 20(6): 744. 李平, 王青圃, 高达, 张其第, 孙连科, 刘训民, 张少军, 林本付, 张凡文. Study of a Passively Q-Switched Nd:YAG Laser with GaAs[J]. Acta Optica Sinica, 2000, 20(6): 744.