光子学报, 2006, 35 (1): 0009, 网络出版: 2010-06-03
808 nm InGaAsP-InP单量子阱激光器热特性研究
Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers
单量子阱激光器 热特性 特征温度 SQW Laser 808 nm 808nm InGaAsP-InP InGaAsP-InP Thermal characteristics Characteristic temperature
摘要
从InGaAsP-InP单量子阱激光器结构分析入手,采用自行设计的热封闭系统对808nmInGaAsP-InP单量子阱激光器热特性进行了研究.实验表明,在23-70℃的温度范围内,器件的功率由1.74W降到0.51W,斜率效率由1.08W/A降到0.51W/A.实验测得其特征温度T0为325K.激射波长随温度的漂移dλ/dT为0.44nm/℃.其芯片的热阻为3.33℃/W.
Abstract
The temperature characteristics of 808 nm InGaAsP-InP SQW lasers have been investigated in a heat-tight system by analyzing their structure. It is shown that the power and the slope efficiency of the devices decreases from 1.74 m to 0.51 W and 1.08 mW/mA to 0.51 mW/mA in the temperature range of 23~70℃,respectively. Lasing wavelength shift coefficient dλ/dT is 0.44 nm/(℃). The characteristic temperature T0 of 325 K is experimentally obtained. The thermal resistance of the chip,determined experimentally,is 3.33℃/W.
张永明, 钟景昌, 路国光, 秦莉, 赵英杰, 郝永芹, 姜晓光. 808 nm InGaAsP-InP单量子阱激光器热特性研究[J]. 光子学报, 2006, 35(1): 0009. Zhang Yongming, Zhong Jingchang, Lu Guoguang, Qin Li, Zhao Yingjie, Hao yongqin, jiang xiaoguang. Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers[J]. ACTA PHOTONICA SINICA, 2006, 35(1): 0009.