中国激光, 1998, 25 (9): 785, 网络出版: 2006-10-18
1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长
Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD
摘要
报道了用低压金属有机物化学气相淀积(in Chinese)LP-MOCVD)方法外延生长InGaAsP/InP应变补偿多量子阱结构。用此材料制备的掩埋异质结(BH)条形结构多量子阱激光器具有极低阈值电流4～6 mA。20～40 ℃时特征温度T0高达67 K,室温下外量子效率为0.3 mW／mA。
Abstract
A 1.3 μm InGaAsP/InP strained compensated multi quantum wells structure grown by low pressure metalorganic chemical vapor deposition (LP MOCVD) was proposed. The threshold currents of buried heterostructure (BH) MQW lasers with this strained layers structure were 4~6 mA mostly. The characteristic temperatures up to 67K were observed for the devices under a temperature between 20~40℃, the single facet slope efficiency is 0.3 mW/mA at room temperature.
陈博, 王圩, 汪孝杰, 张静媛, 周帆, 马朝华. 1.3μm低阈值InGaAsP/InP应变补偿MQW激光器的LP-MOCVD生长[J]. 中国激光, 1998, 25(9): 785. 陈博, 王圩, 汪孝杰, 张静媛, 周帆, 马朝华. Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD[J]. Chinese Journal of Lasers, 1998, 25(9): 785.
PDF全文
