光学学报, 1998, 18 (4): 491, 网络出版: 2006-10-18  

Ge:SiO2的光敏缺陷的研究

Photosensitive Defects in Germania Doped Silica Glasses
作者单位
1 杭州浙江大学信息与电子工程系, 杭州 310027
2 杭州浙江大学现代光学仪器国家重点实验室, 杭州 310027
摘要
研究了Ge:SiO2光敏缺陷的特性,分别在488 nm Ar离子激光与193 nm ArF准分子激光作用下,由紫外吸收带、激光荧光的测量实验及电子自旋共振实验,发现光纤中5.1 eV锗缺陷吸收带实际上是由5.06 eV可光致漂白带与5.17 eV不可漂白带组成;295 nm的激发荧光与5.06 eV的缺氧锗缺陷对应,随5.06 eV缺陷吸收带的漂白而衰减;而395 nm的激发荧光与5.17 eV的缺陷有关,随紫外光作用荧光强度保持为常数;提出了这两种缺陷的结构模型,讨论了吸收带漂白与曝光剂量的关系以及缺陷在不同激光照射下的光敏作用。
Abstract
The nature of photosensitive defects in germania doped silica glasses under irradiation of 488 nm Argon laser and 193 nm ArF excimer laser are investigated. From the careful measurement of UV induced absorption bands, photoluminescence changes, and electron spin resonance (ESR) experiments, we found that the 5.1 eV germania defect absorption band in fibers is composed of 5.06 eV photo bleachable band and 5.17 eV relative photochemically stable band. And the photoluminescence at 295 nm corresponding to 5.06 eV defects is decaying with 5.06 eV photobleaching. While the luminescence at 395 nm is attributed to 5.17 eV defect and its intensity keeps constant with UV irradiation. The structural models of two defects are presented, the bleaching dynamic of absorption with laser irradiation is analyzed, and the photosensitive processes with different laser sources are discussed.

金晓峰, 张仲先, 徐森禄, 杨国光. Ge:SiO2的光敏缺陷的研究[J]. 光学学报, 1998, 18(4): 491. 金晓峰, 张仲先, 徐森禄, 杨国光. Photosensitive Defects in Germania Doped Silica Glasses[J]. Acta Optica Sinica, 1998, 18(4): 491.

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