量子电子学报, 2006, 23 (2): 0222, 网络出版: 2010-06-07
C掺杂GaAs外延层光学特性分析
Carbon doped GaAs epitaxial layer grown by MOCVD
摘要
对利用EMCORE D125 MOCVD系统生长的以CCl4为掺杂源,分析不同C掺杂浓度的GaAs外延层光学特性。通过PL、DC XRD测试手段研究了掺C GaAs层,随C掺杂浓度增加,禁带宽度收缩,PL谱峰值半宽增大,晶格常数减小。
Abstract
The GaAs epitaxial layers of various dopant concentration are grown with CCl4as the doping source by the EMCORE D125 MOCVD system. The C-doped GaAs optical properties are studied by PL,DC XRD. With C dopant concentration increase,band gap shrink,FWHM of PL increase,and lattice constant decrease.
邢艳辉, 李建军, 邓军, 韩军, 盖红星, 沈光地. C掺杂GaAs外延层光学特性分析[J]. 量子电子学报, 2006, 23(2): 0222. XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 0222.