光子学报, 2006, 35 (7): 1001, 网络出版: 2010-06-03
有限深V型势阱中总折射率的改变
Change of Total Refractive Index in Finite V-shaped Quantum Well
摘要
研究了有限深V型势阱折射率改变,并且利用量子力学中的密度矩阵算符理论和迭代法导出了一次,三次谐波极化率系数.最后,以GaAs有限深V型势阱为例作了数值计算.数值结果表明,减少入射光强度,或增加电子浓度使总折射率改变变大.
Abstract
The change of refractive index in finite V-shaped quantum well is investigated. The first-and third-harmonic generation coefficient is obtained by using Compact-density-matrix approach and iterative method,and the numerical results are presented for GaAs/AlGaAs finite V-shaped quantum well. The results show that the change of total refractive index will be large with decreasing incident intensity.
陆志恩, 郭康贤. 有限深V型势阱中总折射率的改变[J]. 光子学报, 2006, 35(7): 1001. Lu Zhi'en, Guo Kangxian. Change of Total Refractive Index in Finite V-shaped Quantum Well[J]. ACTA PHOTONICA SINICA, 2006, 35(7): 1001.