为了表征严重影响材料生长和器件性能均匀性的微米尺度的局域非均匀性，采用非接触、快捷的荧光光谱的测量方法，并经数据处理后直接得到微米量级薄膜光学厚度参数的均匀性。结果表明，拟合后获得的斜率分布均匀性可直接反映材料厚度的均匀性，可为材料生长工艺优化研究提供重要的信息。

Based on the interference signal in the micro-photoluminescence(μ-PL)spectra,a practical method of getting local optical thickness for GaN-based material is presented. By means of analyzing the sequence energy of interference peaks,the optical thickness of the GaN-based films can be determined. The non-uniformity of the fitted parameter can correspondingly show that of the optical thickness. This can give the important information for optimizing the material growth technique.