中国激光, 2006, 33 (12): 1671, 网络出版: 2006-12-30
大功率半导体激光器热弛豫时间的测量
Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers
激光技术 半导体激光器 时间分辨谱 热弛豫时间 laser technique semiconductor laser time-resolved spectrum thermal relaxation time
摘要
根据脉冲工作状态下半导体激光器激射光谱随结温升高而发生红移的原理,提出了一种测试半导体激光器热弛豫时间的新方法——利用调节取样积分器(Boxcar)取样门,测量光信号脉冲内不同时刻的时间分辨光谱。采用此方法对TO封装和厘米-靶条(cm-Bar)阵列的AlGaAs/GaAs半导体激光器的动态热特性进行了测试,得到其热弛豫时间分别为66 μs和96 μs。
Abstract
Based on lasing wavelength red-shift of semiconductor lasers due to junction temperature rising in pulsed operations, time-resolved spectra were measured by adjusting Boxcar gate position related to the current pulse. The thermal relaxation times of TO-can and cm-Bar array AlGaAs laser were obtained to be 66 μs and 96 μs, respectively. The measured dynamic thermal characteristics are of significance for pumping solid-state lasers.
程灿, 辛国锋, 皮浩洋, 瞿荣辉, 方祖捷. 大功率半导体激光器热弛豫时间的测量[J]. 中国激光, 2006, 33(12): 1671. 程灿, 辛国锋, 皮浩洋, 瞿荣辉, 方祖捷. Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers[J]. Chinese Journal of Lasers, 2006, 33(12): 1671.