报道了分子束外延锗基中波碲镉汞薄膜材料以及 320×256锗基中波碲镉汞红外焦平面探测器研究的初步结果。利用分子束外延技术基于 3英寸锗衬底生长的中波碲镉汞薄膜材料，平均宏观缺陷密度低于 200 cm－2，平均半峰宽优于 90 arcsec，平均腐蚀坑密度低于 2.9×106 －2；采用标准的二代平面工艺制备的 320×256锗基中波碲镉汞红外焦平面探测器，平均峰值探cm测率达到 3.8×1011 cm.Hz1/2W－1，平均等效噪音温差优于 17.3 mK，非均匀性优于 6.5%，有效像元率高于 99.7%。

MBE grown HgCdTe-on-Ge MW 320×256 IRFPA detector is investigated in this article. The macro-defect of 3 inch MW HgCdTe-on-Ge is lower than 200 cm－2, the FWHM is lower than 90 arcsec, and the EPD is lower than 2.9×106 cm－2. And the MW 320×256 IRFPA detector based on MCT/CT/Ge by the second standard plaint art is also introduced, with the D* better than 3.8×1011 cm.Hz1/2W－1, NETD lower than 17.3 mK, the non-uniformity of respond lower than 6.5%, and the operability higher than 99.7%.