基于垂直外腔面发射半导体激光器窗口散热模式的传热模型，用有限元法计算了不同条件下量子阱有源区的温度变化，建立了量子阱最高温度的等效热阻模型和计算公式，并通过拟合确定了热阻模型的相关参数.计算表明量子阱最高温度与抽运功率存在线性关系，与光斑面积近反比关系，窗口散热片可显著降低量子阱有源区温度和温度的不均匀度.等效热阻模型表明由于半导体晶片内热流在径向难以扩散，热传导中存在较大串联热阻，使得散热片热扩散能力趋于饱和，其中碳化硅的散热性能约为金刚石的75%.

Based on the heat transfer model of vertical external cavity surface emitting semiconductor laser with heatspreader, the change in temperature of the quantum well active region has been calculated under different conditions with the finite element method. The equivalent thermal resistance model has been proposed and calculation formula has been derived for the maximum temperature of quantum well, the parameters of which are determined by fitting curves. The calculation shows that the maximum temperature of the quantum well increases linearly with the pump power, while it is nearly inversely proportional to the light spot area. The heatspreader can significantly reduce temperature and its unevenness in the active region of the quantum well. The equivalent thermal resistance model shows that a larger thermal resistance forms due to the difficulty of heat flux to spread in the radial direction, thus thermal diffusion capacity of the heatspreader tends to saturation. As a result the thermal performance of silicon carbide is approximately 75% of that of the diamond.